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The morphology and atomic depth distribution of Ga films grown on Si(111)-7×7 and -4×1-In surfaces at room temperature were studied by using reflection high-energy electron diffraction and characteristic x-ray measurements as functions of glancing angle g of the incident electron beam. Ga grew into liquid droplets on the Si(111)-7×7 surface, as it does on many other semiconductors. On the other hand, on the 4×1-In surface, Ga grew into an ordered flat film and In floated to the uppermost layer during the growth process of Ga. The resultant top In layer and Ga-Si interface had /2×/2 and 5×5 periodicities, respectively.

Thin Cu films deposited on Si(111) surfaces may serve as excellent substrates for uniform or epitaxial growth of other metallic layers. The initial deposition of Cu on Si(111) leads to the formation of reacted layers building a chemical phase on the surface that saturates or stabilizes after deposition of the equivalent of 6 ML of unreacted Cu. Photoemission with synchrotron radiation shows that for further Cu deposition a perfect Cu film with a surface state and clear signs of quantum-well states are forming. The growth of thin Ag layers on such a Cu buffer phase leads to well-ordered films with optimally sharp Ag quantum-well levels.

We present a detailed investigation of bulk properties of MgO and lattice relaxations around divalent impurities in MgO by means of the full-potential Korringa-Kohn-Rostoker Green's function method. The local-density approximation and the perturbative generalized gradient corrections are used to calculate the lattice constant and bulk modulus of MgO. We obtain a very good description of the ground properties of MgO. Lattice relaxations around divalent impurities in MgO are determined using an ionic version of the Hellmann-Feynman theorem.

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