なかのにっき

Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 °C to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters.

This study investigates the dependence of Ag resistivity on film thickness during temperature ramping as a means to access thermal stability. In situ van der Pauw four-point probe analysis is used to determine the onset temperature; the temperature when the electrical resistivity deviates from linearity during the temperature ramp. At that point, the silver thin films become unstable due to void formation and growth during thermal annealing. The thermal stability of Ag thin films on SiO2 in a vacuum is greatest when thicknesses are greater than 85 nm. Using an Arrhenius relation in terms of onset temperature and film thickness, an activation energy (0.32±0.02 eV) for the onset of agglomeration in Ag thin films on SiO2 ramped at a rate of 0.1 °C/s is determined. This value is consistent with the activation energy for surface diffusion of silver in a vacuum, which is believed to be the dominant mechanism for agglomeration of silver thin film.