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A measuring apparatus based on a phase shifting interferometry technique to determine the mechanical properties of metal oxide films was presented. Thin films were prepared by ion-beam sputter deposition at low substrate temperature. Quantitative determination of the mechanical properties such as the internal stress, biaxial elastic modulus, and thermal expansion coefficient of metal oxide films were investigated. A phase shifting Twyman萌reen interferometer with the phase reduction algorithm was setup to measure the temperature-dependent stress in thin films. Two types of circular glass plates, with known Young's moduli, Poisson's ratios, and thermal expansion coefficients, were used as coating substrate. The temperature-dependent stress behavior of the metal oxide films was obtained by heating samples in the range from room temperature to 70 −C. The stresses of thin films deposited on two different substrates were plotted against the stress measurement temperature, showing a linear dependence. Four oxide films were reported for their film stresses and thermal expansion coefficients.

The 3ω method has been proven to be very useful for determining the thermal conductivity of thin films and their substrates. Several simplifications are often used in determining the thermal conductivity of the films based on the experimentally measured 3ω signal. These simplifications, however, have limited range of applicability. In this work, we present a detailed analysis and mathematical modeling of the 3ω method applied for different experimental conditions. Effects considered include the finite substrate thickness, anisotropic nature of the film and substrate thermal conductivity, the film-substrate thermal property contrasts, the effect of heat capacitance of the heater, and the effect of thermal boundary resistance. Several experimental results are analyzed using the models presented. This work shows that the 3ω method can be extended to a wide range of sample conditions, with anisotropic conductivities in both the substrate and the film, and with small film-substrate conductivity contrast.