なかのにっき

 const char QCMD[] = "Q:\r";
  :
 write(fd, QCMD, sizeof(QCMD));

 write(fd, QCMD, sizeof(QCMD)-1);

  const char QCMD[3] = { 'Q', ':', '\r'};

 const char QCMD[] = "Q:\r";
  :
 write(fd, QCMD, strlen(QCMD));

-      900,         0,K,K,R

  res = read(fd,buf,255);
  buf[res] = 0;

  token = strtok(buf, ",");
  if (token != NULL){
    *xpos = atol(token+1);
    if (*token == '-') {*xpos *= -1;}
  } else { rcode = 1;}

  token = strtok(NULL, ","); /* ypos */
  if (token != NULL){
    *ypos = atol(token+1);
    if (*token == '-') {*ypos *= -1;}
  } else { rcode = 1;}

  token = strtok(NULL, ","); /* ack1 */
  switch (*token){
    case 'X':
      *ack1 = ACK1_NG;
      break;
    case 'K':
      *ack1 = ACK1_OK;
      break;
    default:
      *ack1 = ACK_ERROR;
      rcode = 1;
      fprintf(stderr, "(m102_q): parse error for ACK1\n");
  }
   :

We study a class of one-dimensional, nonequilibrium, conserved growth equations for both nonconserved and conserved noise statistics using numerical integration. An atomistic version of these growth equations is also studied using stochastic simulation. The models with nonconserved noise statistics are found to exhibit mound formation and power-law coarsening with slope selection for a range of values of the model parameters. Unlike previously proposed models of mound formation, the Ehrlich-Schwoebel step-edge barrier, usually modeled as a linear instability in growth equations, is absent in our models. Mound formation in our models occurs due to a nonlinear instability in which the height (depth) of spontaneously generated pillars (grooves) increases rapidly if the initial height (depth) is sufficiently large. When this instability is controlled by the introduction of an infinite number of higher-order gradient nonlinearities, the system exhibits a first-order dynamical phase transition from a rough self-affine phase to a mounded one as the value of the parameter that measures the effectiveness of control is decreased. We define a new ``order parameter'' that may be used to distinguish between these two phases. In the mounded phase, the system exhibits power-law coarsening of the mounds in which a selected slope is retained at all times. The coarsening exponents for the continuum equation and the discrete model are found to be different. An explanation of this difference is proposed and verified by simulations. In the growth equation with conserved noise, we find the curious result that the kinetically rough and mounded phases are both locally stable in a region of parameter space. In this region, the initial configuration of the system determines its steady-state behavior.

Bulk and thin film specimens of AgB2 were prepared. The bulk pellets were obtained from the powders of the constituents and the films were produced by cosputtering and sequential sputtering. The specimens were annealed and subjected for X-ray and Auger analysis. Preliminary results seems to indicate that AgB2 is an instable phase.

Observation of the rest-atom layer of the Si(111)-(7×7) surface is performed by atomic force microscopy. By detecting the force due to the single chemical covalent bond formed between the tip and the sample surface, individual atoms on the layer were clearly resolved. Unprecedented high spatial resolution was achieved by setting the detection force at a small value and by reducing background forces due to the long-range interactions with the small oscillation amplitude of the cantilever and sharp probe tip.

We consider nonequilibrium adsorption to a freshly formed surface. Owing to the initial lack of equilibrium, the common diffusion-control assumption is inconsistent at small times. A uniform small-time asymptotic approximation is constructed for a Langmuir-type system in terms of the small parameter ε representing the ratio of the respective kinetic and diffusive time scales of the problem. The diffusion-control approximation becomes valid only when t >> ε. The adsorption results are applied to the calculation of the dynamic surface tension.

When performing laser-induced plasma spectroscopy for elemental analysis, the analyte signal-to-noise ratio increased from four to over fifty if the plume was reheated by a dye laser pulse tuned to resonant absorption. Time-resolved studies showed that the enhancement was not due to resonance photoionization. Rather, efficient and controlled rekindling of a larger plume volume was the key mechanism. The signal-to-noise ratio further increased to over a hundred if the atmosphere was replaced by a low-pressure heavy inert gas. The ambient gas helped confine and thermally insulate the expanding vapor.

We have investigated the growth kinetics of perylene, an organic semiconductor with high carrier mobility, on glass and Au substrates grown side-by-side by vapor deposition using atomic force microscopy. Our results show that kinetic roughening theory can reveal a wealth of information about polycrystalline growth. Higher order height?height correlation functions have been calculated for the perylene thin films on glass and Au. These results show that the height?height correlation function and the Hurst exponent saturate once the nominal perylene film thickness reaches the critical value of 40 Å on glass, and 100 Åon Au. After these thicknesses, overhang structures develop and dynamic scaling analysis becomes inappropriate. In addition, we have observed a complex, multiaffine behavior on both substrates evidenced by order dependence of the Hurst exponent. Grain size distribution and shape analysis were also performed on our films.

• Introduction to Linux - A Hands on Guide
  Machtelt Garrels, <tille@coresequence.com>
  v1.0, November 2002

  This guide was created as an overview of the Linux Operating System, geared toward new users as an exploration tour and getting started guide, with exercises at the end of each chapter. For more advanced trainees it can be a desktop reference, and a collection of the base knowledge needed to proceed with system and network administration. This book contains many real life examples derived from the author's experience as a Linux system and network administrator, trainer and consultant. We hope these examples will help you to get a better understanding of the Linux system and that you feel encouraged to try out things on your own.

• Mozilla Optimization Mini-HOWTO
  Salvador J. Peralta <speralta at willamette dot edu>
  v1.0 2003-01-03

  This document discusses how to make configuration and source level customizations of Mozilla to make it more suitable as a primary browser for Linux and X Windows. It is not intended as a guide for programming Mozilla, nor is it a guide to XUL.

• Connecting X Terminals to Linux Mini-HOWTO
  Salvador J. Peralta <speralta@willamette dot edu>
  v1.0, 2002-12-21

  This Mini-HOWTO describes how to connect X Terminals with a Linux host using nfs, xfs, xdm and xdmcp. Additionally, the document discusses configuration recommendations to optimize Linux for use as a host system on a network of thin clients.

• Samba Authenticated Gateway HOWTO
  Ricardo Alexandre Mattar
  v1.0.1, 2002-12-24

  This document intends to show how to build a Firewall/Gateway with rules set on user basis having the users authenticated by a Samba Primary Domain Controller.

  初公開は 12-16。一度 minor update されて 1.0.1。

• Advanced Bash-Scripting Guide

• Text-Terminal-HOWTO
• Linux IPv6 HOWTO ***
• Linux Medicine-HOWTO *
• Handspring-Visor with Linux mini-HOWTO
• Linux XDMCP HOWTO
• FBB Packet-radio BBS mini-HOWTO **
• Program Library HOWTO
• Secure Programming for Linux and Unix HOWTO
• Linux Swap Space Mini-HOWTO
• Automount mini-Howto
• The dosemu HOWTO
• Game Server HOWTO
• Debian Link-sys WPC11 Mini-HOWTO
• LVM HOWTO
• Linux Migration to Promise RAID Card HOWTO
• Debian Jigdo mini-HOWTO *
• C++ dlopen mini HOWTO
• PCTel HSP MicroModem Configuration mini-HOWTO
• Apache Overview HOWTO
• PA-RISC/Linux Boot HOWTO
• Finnish HOWTO
• DocBook XML/SGML Processing Using OpenJade
• Linux IRC mini-HOWTO
• The Linux 2.4 SCSI subsystem HOWTO
• How to setup international keyboard in X Window with Xmodmap and XKB
• Using Xinerama to MultiHead XFree86 V. 4.0+

• C++Programming-HOWTO -- removed for review

Ge/Si(001) layers are grown by gas-source molecular beam epitaxy at 600 °C to probe island self-ordering phenomena. We vary the Ge growth rate by a factor of 40, 1.2-47 monolayers (ML) min^-1, and adjust the Ge coverage, 5.9-8.9 ML, to produce films consisting primarily of dome-shaped Ge islands. Measurements of the radial and nearest-neighbor distributions are compared to calculated distributions for random arrangements of circular islands. At low growth rates, island formation is inhibited at small separation. At high growth rates, the angular distributions of nearest-neighbor islands show pronounced island ordering along <100> directions.

A geometrical model of a porous silicon structure is proposed. The resulting size distribution spectra are analyzed by their relation to photoluminescence and Raman scattering. Both experimental data are investigated and compared to those results. The model well describes the presence of a low-energy part of the photoluminescence spectra with wavelength compatible to bulk crystalline silicon. Shapes and positions of Raman and photoluminescence lines are within the frames of model flexibility and indicate similar values of parameters, especially the minimal size of crystallites where Raman scattering and radiative recombination reveal the activity.

Metallic surface states on semiconducting substrates provide an opportunity to study low-dimensional electrons decoupled from the bulk. Angle resolved photoemission is used to determine the Fermi surface, group velocity, and effective mass for surface states on Si(111)√3×√3-Ag, Si(111)×√3-√3-Au, and Si(111)√21×√21-(Ag + Au). For Si(111)√3×√3-Ag the Fermi surface consists of small electron pockets populated by electrons from a few % excess Ag. For Si(111)√21×√21-(Ag + Au) the pockets increase their size corresponding to a filling by three electrons per unit cell. The √21×√21 superlattice leads to an intricate surface umklapp pattern and to minigaps of 110 meV, giving an interaction potential of 55 meV for the √21×√21 superlattice

We have extended the modified formalism of Sheng, Xing, and Wang [J. Phys.: Condens. Matter 11 L299 (1999)] to allow the calculation of the conductivity of a thin metallic film bounded by a rough fractal surface. We utilized the so-called k-correlation model proposed by Palasantzas and Barnas [Phys. Rev. B 48, 14 472 (1993); 56, 7726 (1997)], to describe the height-height autocorrelation function corresponding to a self-affine roughness. This extension permits the calculation of the conductivity of the film as a function of the r.m.s. roughness amplitude δ, of the lateral correlation length ξ, of the mean free path in the bulk l, and of the roughness exponent H. We found that the degree of surface irregularity, represented by the roughness exponent H characterizing the surface, does influence the conductivity of the film, as first discovered by Palasantzas and Barnas. However, this influence manifests itself for large bulk mean free paths l〜1000 nm and for large correlation lengths ξ〜5 nm, in which case the conductivity of the film for H = 1 exceeds by about 30% the conductivity for H = 0.2, an effect which is smaller than that reported by Palasantzas and Barnas. For correlation lengths ξ below 1 nm and mean free paths l〜100 nm, the influence of the roughness exponent H on the conductivity is reduced to below 10%, and for smaller mean free paths and correlation lengths the conductivity becomes insensitive to H. We also found that Mathiessen's rule is severily violated in the case of thin metallic films. The resistivity of the film coincides roughly with the surface-limited resistivity only in the case of ultrathin films t<5 nm. For thicker films 100 nm>t>5 nm, the resistivity of the film exceeds by some 20 to 30 % the value dictated by Mathiessen's rule. And conversely, the apparent surface-induced resistivity estimated assuming the validity of Mathiessen's rule, exceeds by nearly one order of magnitude the true surface-induced resistivity, except in the case of ultrathin films t<5 nm.

The reflectivity of short pitch metal gratings consisting of a series of narrow Gaussian ridges in the classical mount has been modeled as a function of frequency and in-plane wave vector (the plane of incidence containing the grating vector) for various ridge heights. Surface plasmon polaritons (SPP's) are found to be excited even in the zero-order region of the spectrum. These may result in strong absorption of radiation polarized with its electric field in the plane of incidence (transverse magnetic). For zero in-plane wave vector the SPP modes consist of a symmetric charge distribution on either side of the grating ridges, a family of these modes existing with different numbers of field maxima per grating period. Because of the charge symmetry these modes may only be coupled to at angles away from normal incidence where strong resonant absorption may then occur. The dispersion of these SPP modes as a function of the in-plane wave vector is found to be complex arising from the formation of very large band gaps due to the harmonic content of the grating profile, the creation of a pseudo high-energy mode, and through strong interactions between different SPP bands.

• args_info.inputs_num が引数の個数。
• args_info.inputs[] が引数文字列へのポインタの配列。

• strelmove
• stabsmove
• stzero
• stlock
• stunlock

1. 生体のメカニズムを研究するもの→バイオモータ、特に回転モータ (Walker 1994 Novel Prize)。ATP サイクルを使った F1 モータ、H+ driven な F0 モータなど。
2. Bulk や表面の物性、自己組織化を利用するもの→フタロシアニンの一次元鎖を使った配線など。
3. SPM 技術を応用して展開するもの→STM による原子移動、Xe を介在させたスイッチング、AFM でも Si/Ag ??3x??3 において、Ag トライマーの伸び縮みによるスイッチングのような現象が見られるらしい。あとはグラファイト上摩擦力のアレ :-) とか。

% addgroup scsi
% chown root.scsi /dev/scsi
% chmod 660 /dev/sg0 /dev/ttyS0

• WordPerfect on Linux FAQ

• The Linux Kernel HOWTO
• Burning a RedHat CD HOWTO
• Debian Link-sys WPC11 Mini-HOWTO
• Linux Netstation HOWTO
• Linux IPv6 HOWTO
• Linux IP Masquerade HOWTO
• Link-sys WPC11 Mini-HOWTO

「選択を変えない場合に当たる確率は1/3。選択を変えてハズレるのは最初に当たりを引いていた場合で，それ以外は当たるわけだから選択を当たる確率は1-1/3=2/3となる。したがって選択を変えた方が有利」j

結局，答えを知っている相手(司会者)による選別を経たほうが確率が高いということだ．自分が最初に選んだ一つだけは相手の選別の対象となっていないので，確率が上昇しない．

We report on experiments on vertically shaken binary granular mixtures, which separate into their components due to the external excitation. This well-known phenomenon, where large particles rise to the top of the mixture, is called the Brazil-nut effect. Recent theoretical findings predict also a reverse Brazil-nut effect, where large particles sink to the bottom of the container. We choose spherical beads of various diameters and materials in order to observe the transition from Brazil-nut effect to its reverse form. The direction of demixing depends sensitively on the external excitation, so that it is possible to switch between both effects for a given mass density ratio.

The scaling exponents α, β, and 1/z in thin films of the organic molecule diindenoperylene deposited on SiO2 under UHV conditions are determined. Atomic-force microscopy, x-ray reflectivity, and diffuse x-ray scattering were employed. The surface width displays power law scaling over more than 2 orders of magnitude in film thickness. We obtained α= 0.684±0.06, β= 0.748±0.05, and 1/z = 0.92±0.20. The derived exponents point to an unusually rapid growth of vertical roughness and lateral correlations. We suggest that they could be related to lateral inhomogeneities arising from the formation of grain boundaries between tilt domains in the early stages of growth.

Optical properties of ultrathin layers (<50 Å) of Au and Pb quench condensed on amorphous germanium (α-Ge) have been measured in situ at 10 K. The development of these films from an insulating state to a metallic state is traced as a function of the film thickness as well as the sheet resistance, R□. Of particular interest is the regime of R□ near 3000 Ω where there is an anomaly in the optical transmission. This anomaly is due to a singularity in the dielectric function when the system undergoes an electronic percolation or insulator-to-metal (I/M) transition.

Nanoindentation of crystalline and amorphous silicon nitride films is studied using 10-million-atom molecular dynamics simulations. A rigid pyramid-shaped indenter tip is used. Load-displacement curves are computed and are used to derive hardness and elastic moduli of the simulated crystalline and amorphous films. Computer images of local pressure distributions and configuration snapshots show that plastic deformation in the film extends to regions far from the actual indent.

Si nanoclusters have been formed by 5 keV Si+ implantation at a fluence of 1×10^16 atoms/cm2 into a 200 Å thin thermally grown SiO2 film on Si (100), followed by thermal treatment at 1000 ℃ with different annealing times. All the annealed samples show a broad photoluminescence spectrum with increasing intensity as function of annealing time. The use of a dual beam time of flight secondary ion mass spectrometry in negative mode with Cs+ ions at low energy for sputtering allows us to observe variations in Si_n- signal due to excess of silicon atoms introduced by implantation. With the high sensitivity achieved using this instrumental configuration it is possible to follow Si signals which give information about the chemical enviroment of the Si atoms. The possibility of studying the time evolution of the nucleation and growth of nanoclusters has been investigated.

The built-in electrical potential of Cu(In,Ga)Se2 (CIGS) solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy. Profiles of the electrical potential along cross sections of the device demonstrate that the p?n junction is a buried homojunction, and the p/n boundary is located 30?80 nm from the CIGS/CdS interface in the CIGS film. The built-in electric field terminates at the CIGS/CdS interface, indicating that the CdS and ZnO layers of the device structure are inactive for the collection of photoexcited carriers.

The throw distance of Al and W atoms was determined (A) by investigating the pressure-dependent deposition rate and applying the Keller-Simmons one-dimensional model. The power density at the target as a parameter was varied over more than one order of magnitude. Whereas the values determined for Al are not influenced by power, the values for tungsten strongly increase with power. This effect is related to strong gas density reduction related to gas heating for W sputtering, which reduces the probability of collisions between sputtered atoms and the gas. The gas heating was experimentally determined by simultaneous measurements of the pressure in the sputtering chamber and at the end of a tubular probe inserted into the hot plasma region. For tungsten, a strong heating and related gas density reduction was found. An analytical expression describing the spatially resolved temperature profile in a sputtering discharge is developed by means of the Keller-Simmons formulas. The influence of various process parameters on gas heating can be easily studied by the model. There is good agreement between the model calculations with the experiments performed as well as with Monte Carlo simulations and experimental findings from the literature. Forward simulations by the model result in a power-independent throw distance (B) for both elements, which are in agreement with the values (A) resulting from the pressure-dependent deposition rate. Existing differences are explained by the rough assumptions of the model, which is critically discussed.

By chemisorption of oxygen on an aluminum target, an absolute target voltage increase is noticed which can be attributed to the reduction of the secondary electron emission from the target. By following the target voltage behavior during magnetron sputtering of the aluminum target precovered with a chemisorbed oxygen layer, the cross section for removing the chemisorbed layer could be calculated based on a proposed model that relates the measured target voltage to the target coverage.

Using an energy selective mass spectrometer, ion energy distribution functions (IEDFs) in a low pressure radio frequency (rf) argon discharge have been measured. This experiment has been done in the diffusion chamber of a helicon source. Two kinds of IEDF have been observed depending on the gas pressure: classical "one-peak" spectra at high pressure (>1 μbar) and "two-peak" spectra at low pressure (<1 μbar). These results have been correlated with the plasma potential and density profiles along the axis of the reactor obtained with a Langmuir probe and the IEDF have been fitted using a simple analytical model. In this way, noncollisional diffusion of energetic ions from the source chamber to the diffusion chamber has been shown.

A particle-in-cell/Monte Carlo numerical model has been developed to simulate a direct current discharge self-consistently with the motion and thermalization of both energetic charge-exchange neutrals and sputtered cathode atoms. In the model the charged particle motions are considered in a self-consistent electric field. A one-dimensional glow discharge in Ar has been simulated for the cases of Al and Cu cathode. The background argon gas heating has been predicted, with the temperature rise being larger for the case of Cu cathode which is characterized by a higher sputtering yield than Al. The balance of power input into the gas due to the energetic neutrals, sputtered atoms, and ions is analyzed. The dominant contribution is from energetic neutrals. Comparison of the calculated fluxes of these three species at the cathode surface shows a great contribution of the energetic neutrals into sputtering of the cathode material. The effect of applied voltage has been also investigated. Lastly, the influence of the gas heating on discharge characteristics is discussed.

The pressure dependence of the deposition rate for magnetron sputter deposition of various elemental semiconductors and metals was investigated by x-ray measurements on sputtered films and quartz monitor measurements. It was found that for all elements investigated the dependence of the rate on pressure-distance (pd) is well described by Φ=Φ0(1 - e^-cpd)/cpd. The value of c equals the inverse characteristic pressure-distance product (pd)0, which is the characteristics of the exponential decay of rate with pressure for low pressures. The experimental data of (pd)0 vary from 4.6 Pa cm for aluminum to 120 Pa cm for tungsten. It is shown that (pd)0 depend on both material specific properties and process parameters. The material specific properties are mainly the atomic mass and diameter, and the surface binding energy. The process parameters target voltage and power density act via the increase of the mean free path and the reduction of gas density, respectively, on (pd)0. As a first approximation, the characteristic pressure-distance product for argon as sputtering gas is proportional to the product of target atomic mass, average atomic energy and thermal mean free path.

Pressure measurements in the range of low and medium vacuum are conveniently and accurately performed by mechanical instruments which detect pressure-induced deformations. The stability of both calibration and zero setting are considerably improved by operating the transducers at a stabilized elevated temperature. Due to thermal transpiration the temperature difference between transducer and vacuum vessel may cause a pressure difference which depends on the pressure itself, the geometry and surface properties of the interconnection, and also the gas species. In order to determine the vessel pressure, the empirical correction formula of Takaishi and Sensui has proved to be successful. Our accurate measurements reveal for the first time a minor, but systematic failure of this correction procedure. This failure is attributed to an improper application of the formula, i.e., the disregard of the specific surface properties of the interconnection. To overcome this deficiency, we suggest using fitted values for the temperature and diameter which appear in the formula, instead of actual values. By this procedure the systematic deviations are removed, and the Takaishi and Sensui formula allows description of our vessel pressures better than 0.1%.

• Lotus Domino R5 for Linux mini-HOWTO
  Mykola Buryak <1upus@gmx.ch>
  v1.0 2003-01-18

  This mini-HOWTO gives you explicit instructions on installing Lotus Domino R5 for Linux on the Intel x86-based distributions of Mandrake Linux 8.1 and SuSE 7.3 Professional.

• GNU/Linux AI & Alife HOWTO
• Remote Serial Console HOWTO

sroep [--directory=DIR] --cc=CENTER_CHANNEL --hw=HALF_WIDTH [--debug]

• --directory はデータディレクトリ。省略するとカレントディレクトリ。
• --cc は対象となるチャンネル範囲の中心。
• --hw は対象となるチャンネル範囲の幅。cc-hw〜cc+hw が対象になる。
• --debug を指定すると、チャネル範囲の測定データ・gaussfit のコマンドライン・gaussfit への STDIN と結果の STDOUT, STDERR を標準出力に表示する。

  my $AI = sprintf "%f", $imax;
  my $AU = sprintf "%f", 2 * $imax;
  my $AL = sprintf "%f", 0.3 * $imax + 0.7 * $imin;

  my $CI = sprintf "%f", $CCH;
  my $CL = sprintf "%f", $CCH - 2;
  my $CU = sprintf "%f", $CCH + 2;

  my $BI = sprintf "%f", $imin;
  my $BL = sprintf "%f", $imin - $sigma;
  my $BU = sprintf "%f", 0.7 * $imax + 0.3 * $imin;

  my $WI = sprintf "%f", 1.5;
  my $WL = sprintf "%f", 0.5;
  my $WU = sprintf "%f", 3.0;

$DEBUG = 0;
$result = GetOptions ("dir=s" => \$DIR,
                      "cc=i"  => \$CCH,
                      "hw=i"  => \$HWC,
                      "debug"  => \$DEBUG);
  :
if ($DEBUG) {もげもげ}

• もうちょい厚いターゲットにする。(現在 3mm→5mm)
• タイヤゲージみたいな治具を用意して時々測る。

Signal	119nA
C.Lens	340
O.Lens	369
Pos.X	+0.1
Pos.Y	+0.6

Date: 05 Mar 2002 00:11:47 -0500

• Bangla PDF HOWTO
  Progga <abulfazl@juniv.edu>
  v1.0 2003-01-30

  This text describes the PDF creation process using KWord with the Bijoy2000 fonts and Bijoy keyboard, for working in the Bangla language. It is assumed that the reader is a user of Bijoy2000 software (typically used in Bangladesh) or at least has access to Bijoy2000 fonts.

• C-C++ Beautifier HOW-TO
• The Linux Kernel HOWTO
• LILO, Linux Crash Rescue HOW-TO
• Vim Color Editor HOW-TO (Vi Improved with syntax color highlighting)

• WordPerfect on Linux FAQ

• ターゲットを下げるための中間フランジ
• 窓の位置で Cu 堆積量を測定するための板 (今のモニタをつける)
• ターゲットが抜けてしまった ためにえぐれた Cu ホルダの交換品