なかのにっき

Function getFirstName(srcName) As String
    Dim names
    names = Split(Replace(srcName, "　", " ")) '--- 全角スペースは半角に置換して処理
    getFirstName = names(0)
End Function

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SELECT * FROM PAPERS WHERE ID_PAPER=
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% addgroup scsi
% chown root.scsi /dev/scsi
% chmod 660 /dev/sg0 /dev/ttyS0

A model of surfactant-mediated epitaxy is investigated using the kinetic Monte Carlo method. This model assumes that (1) adatom-adatom interaction on the surfactant layer is weakly repulsive for dimers, and (2) a concerted atomic exchange of adatoms with surfactant atoms occurs when adatom clusters above the surfactant layer reach a threshold size. All essential features observed in a recent study of Ge/Pb/Si(111) reported by Hwang, Chang, and Tsong can be satisfactorily explained with this model.

A scaling law describing the aspect ratio of submonolayer epitaxial islands is established by applying kinetic Monte Carlo simulations. Anisotropic detachment of atoms from island borders is identified to be responsible for the transition from nearly isotropic islands at low temperatures over one-dimensional chainlike structures to elongated compact islands at high temperatures. The devised scaling law reflects the influence of the energy barriers, growth temperature, and flux very precisely. A comparison with experimental data demonstrates quantitative agreement and allows the determination of kinetic parameters.

Scanning tunneling microscopy (STM) studies have revealed that when a small fraction of a monolayer of Al, Ga, or In is deposited on Si(001) it forms one-dimensional lines of ad-dimers on the surface. No similar structures have been reported for the case of group V elements. We have studied the adsorption of group III and group V metals on Si(001) by first principles total energy calculations starting with the adsorption of a single atom up to a full surface coverage. Different adsorption sites are found for single group III and V adatoms. When a second atom is adsorbed, in both cases, there is a strong preference of the two atoms to dimerize. However, the orientation and position of the ad-dimer is determined by the binding site of the first atom. The formation of the long lines in the case of group III and not for group V metals is a direct consequence of these differences.

A Monte Carlo program for the simulation of the growth of two-dimensional polycrystalline films onto amorphous substrates is proposed. The coordinate of the atoms are quasicontinuous, allowing islands with different orientations to be included in the same sample. Enhanced diffusion along grain boundaries does not need to be modeled ad hoc since, in our model, it is a simple geometrical consequence of grain misorientation. Adsorption sites are partly fixed and partly dynamically generated at run time. The energy barriers are calculated taking into account the environment of the diffusing atoms. Island and grain size distributions estimated over samples obtained with simulated depositions performed at various substrate temperature are reported. The effect of the substrate temperature on the average grain size in films with coverages from 0.2 to 1 have been simulated and compared with the experimental data available in the literature.

The effects of a patterned substrate on island nucleation are investigated using kinetic Monte Carlo simulations. Two different models are formulated by incorporating an inhomogeneous energy surface into the basic solid-on-solid model of epitaxial growth to describe surface diffusion and consequent island nucleation on a patterned substrate. These models are related to two examples of real systems in which preferential nucleation at specific sites is encountered. Growth on a patterned substrate produces quite uniformly sized islands, which are are found to order into regular arrays displaying the periodicity of the underlying substrate. Confinement due to the patterned substrate is observed to be strongly dependent on the growth conditions. We demonstrate that there exists an optimal set of growth conditions determined by the length scale of the substrate pattern. In addition, the influence of the patterned substrate on the process of Ostwald ripening is discussed.