最新版はこちら。 突っ込みは各日付の BBS エントリのほか、 メール (nakano@st.seikei.ac.jp) や フォーム からどうぞ。 なおスパム除けのため、BBS 機能には 緩い認証を入れて います。 検索エンジンから来た方は、エンジンの方のキャッシュを見るか、 下の簡易検索を試してみてください。
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Namazu for hns による簡易全文検索 詳しくは 詳細指定/ヘルプを参照して下さい |
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「...彼女はおそらく意味や論理といった冗長な手続きをパスして、 そこにあるべき正しいことばを手に入れることができたんだ。 (中略) 芸術家とは、冗長性を回避する資格を持つ人々のことだ」
const char QCMD[] = "Q:\r"; : write(fd, QCMD, sizeof(QCMD));のようにしたところ、結果はちゃんと返ってくるのだけど、 終了後にコントローラが 例の HOST/MANUAL が効かない状態 になった。sizeof(QCMD) は (あたりまえだけど) 4 なので、 末端の \0 も write しちゃってるためらしい。
write(fd, QCMD, sizeof(QCMD)-1);にしたら問題なくいくようになったけど、頭悪そうだなあ。 どうするのが普通なんでしょうかね。 \0 のない 3 文字の定数って簡単に宣言できないのかな。
const char QCMD[3] = { 'Q', ':', '\r'};
と教えていただいた。うまいこと動作しました。ありがとうございます。
const char QCMD[] = "Q:\r"; : write(fd, QCMD, strlen(QCMD));がいいかな。こうしとくか。
- 900, 0,K,K,Rのような結果が返ってくるのを、 掟破りの strtok() で ad-hoc に実装。はっきり言ってヒドイ代物だが以下のような感じ。
res = read(fd,buf,255);
buf[res] = 0;
token = strtok(buf, ",");
if (token != NULL){
*xpos = atol(token+1);
if (*token == '-') {*xpos *= -1;}
} else { rcode = 1;}
token = strtok(NULL, ","); /* ypos */
if (token != NULL){
*ypos = atol(token+1);
if (*token == '-') {*ypos *= -1;}
} else { rcode = 1;}
token = strtok(NULL, ","); /* ack1 */
switch (*token){
case 'X':
*ack1 = ACK1_NG;
break;
case 'K':
*ack1 = ACK1_OK;
break;
default:
*ack1 = ACK_ERROR;
rcode = 1;
fprintf(stderr, "(m102_q): parse error for ACK1\n");
}
:
以下 ack2, ack3 も同様。
Changes: CLONE_NEWNS is now documented in clone(2), and SHM_REMAP was documented in shmop(2). Updates were made to dup(2), mount(2), readv(2), select(2), select_tut(2), statfs(2), wait(2), errno(3), realpath(3), strftime(3), vcs(4), and proc(5), and sched_get(2), setaffinity(2), tty_ioctl(4), capabilities(7), and iso_8859-9(7) were added.むにに。
We study a class of one-dimensional, nonequilibrium, conserved growth equations for both nonconserved and conserved noise statistics using numerical integration. An atomistic version of these growth equations is also studied using stochastic simulation. The models with nonconserved noise statistics are found to exhibit mound formation and power-law coarsening with slope selection for a range of values of the model parameters. Unlike previously proposed models of mound formation, the Ehrlich-Schwoebel step-edge barrier, usually modeled as a linear instability in growth equations, is absent in our models. Mound formation in our models occurs due to a nonlinear instability in which the height (depth) of spontaneously generated pillars (grooves) increases rapidly if the initial height (depth) is sufficiently large. When this instability is controlled by the introduction of an infinite number of higher-order gradient nonlinearities, the system exhibits a first-order dynamical phase transition from a rough self-affine phase to a mounded one as the value of the parameter that measures the effectiveness of control is decreased. We define a new ``order parameter'' that may be used to distinguish between these two phases. In the mounded phase, the system exhibits power-law coarsening of the mounds in which a selected slope is retained at all times. The coarsening exponents for the continuum equation and the discrete model are found to be different. An explanation of this difference is proposed and verified by simulations. In the growth equation with conserved noise, we find the curious result that the kinetically rough and mounded phases are both locally stable in a region of parameter space. In this region, the initial configuration of the system determines its steady-state behavior.
Bulk and thin film specimens of AgB2 were prepared. The bulk pellets were obtained from the powders of the constituents and the films were produced by cosputtering and sequential sputtering. The specimens were annealed and subjected for X-ray and Auger analysis. Preliminary results seems to indicate that AgB2 is an instable phase.
Observation of the rest-atom layer of the Si(111)-(7×7) surface is performed by atomic force microscopy. By detecting the force due to the single chemical covalent bond formed between the tip and the sample surface, individual atoms on the layer were clearly resolved. Unprecedented high spatial resolution was achieved by setting the detection force at a small value and by reducing background forces due to the long-range interactions with the small oscillation amplitude of the cantilever and sharp probe tip.いつぞや日刊工業新聞に載ってたやつかな？ force-curve に関する細かい議論。
We consider nonequilibrium adsorption to a freshly formed surface. Owing to the initial lack of equilibrium, the common diffusion-control assumption is inconsistent at small times. A uniform small-time asymptotic approximation is constructed for a Langmuir-type system in terms of the small parameter ε representing the ratio of the respective kinetic and diffusive time scales of the problem. The diffusion-control approximation becomes valid only when t >> ε. The adsorption results are applied to the calculation of the dynamic surface tension.
When performing laser-induced plasma spectroscopy for elemental analysis, the analyte signal-to-noise ratio increased from four to over fifty if the plume was reheated by a dye laser pulse tuned to resonant absorption. Time-resolved studies showed that the enhancement was not due to resonance photoionization. Rather, efficient and controlled rekindling of a larger plume volume was the key mechanism. The signal-to-noise ratio further increased to over a hundred if the atmosphere was replaced by a low-pressure heavy inert gas. The ambient gas helped confine and thermally insulate the expanding vapor.
We have investigated the growth kinetics of perylene, an organic semiconductor with high carrier mobility, on glass and Au substrates grown side-by-side by vapor deposition using atomic force microscopy. Our results show that kinetic roughening theory can reveal a wealth of information about polycrystalline growth. Higher order height?height correlation functions have been calculated for the perylene thin films on glass and Au. These results show that the height?height correlation function and the Hurst exponent saturate once the nominal perylene film thickness reaches the critical value of 40 Å on glass, and 100 Åon Au. After these thicknesses, overhang structures develop and dynamic scaling analysis becomes inappropriate. In addition, we have observed a complex, multiaffine behavior on both substrates evidenced by order dependence of the Hurst exponent. Grain size distribution and shape analysis were also performed on our films.
This guide was created as an overview of the Linux Operating System, geared toward new users as an exploration tour and getting started guide, with exercises at the end of each chapter. For more advanced trainees it can be a desktop reference, and a collection of the base knowledge needed to proceed with system and network administration. This book contains many real life examples derived from the author's experience as a Linux system and network administrator, trainer and consultant. We hope these examples will help you to get a better understanding of the Linux system and that you feel encouraged to try out things on your own.
This document discusses how to make configuration and source level customizations of Mozilla to make it more suitable as a primary browser for Linux and X Windows. It is not intended as a guide for programming Mozilla, nor is it a guide to XUL.
This Mini-HOWTO describes how to connect X Terminals with a Linux host using nfs, xfs, xdm and xdmcp. Additionally, the document discusses configuration recommendations to optimize Linux for use as a host system on a network of thin clients.
This document intends to show how to build a Firewall/Gateway with rules set on user basis having the users authenticated by a Samba Primary Domain Controller.初公開は 12-16。一度 minor update されて 1.0.1。
Ge/Si(001) layers are grown by gas-source molecular beam epitaxy at 600 °C to probe island self-ordering phenomena. We vary the Ge growth rate by a factor of 40, 1.2-47 monolayers (ML) min^-1, and adjust the Ge coverage, 5.9-8.9 ML, to produce films consisting primarily of dome-shaped Ge islands. Measurements of the radial and nearest-neighbor distributions are compared to calculated distributions for random arrangements of circular islands. At low growth rates, island formation is inhibited at small separation. At high growth rates, the angular distributions of nearest-neighbor islands show pronounced island ordering along <100> directions.まあある意味、普通の結果ではあるのだけれど。絵はとても奇麗。 方位角分布をとってるのがちょっとおもしろい。
A geometrical model of a porous silicon structure is proposed. The resulting size distribution spectra are analyzed by their relation to photoluminescence and Raman scattering. Both experimental data are investigated and compared to those results. The model well describes the presence of a low-energy part of the photoluminescence spectra with wavelength compatible to bulk crystalline silicon. Shapes and positions of Raman and photoluminescence lines are within the frames of model flexibility and indicate similar values of parameters, especially the minimal size of crystallites where Raman scattering and radiative recombination reveal the activity.
Metallic surface states on semiconducting substrates provide an opportunity to study low-dimensional electrons decoupled from the bulk. Angle resolved photoemission is used to determine the Fermi surface, group velocity, and effective mass for surface states on Si(111)√3×√3-Ag, Si(111)×√3-√3-Au, and Si(111)√21×√21-(Ag + Au). For Si(111)√3×√3-Ag the Fermi surface consists of small electron pockets populated by electrons from a few % excess Ag. For Si(111)√21×√21-(Ag + Au) the pockets increase their size corresponding to a filling by three electrons per unit cell. The √21×√21 superlattice leads to an intricate surface umklapp pattern and to minigaps of 110 meV, giving an interaction potential of 55 meV for the √21×√21 superlatticeこりゃすげえ。
We have extended the modified formalism of Sheng, Xing, and Wang [J. Phys.: Condens. Matter 11 L299 (1999)] to allow the calculation of the conductivity of a thin metallic film bounded by a rough fractal surface. We utilized the so-called k-correlation model proposed by Palasantzas and Barnas [Phys. Rev. B 48, 14 472 (1993); 56, 7726 (1997)], to describe the height-height autocorrelation function corresponding to a self-affine roughness. This extension permits the calculation of the conductivity of the film as a function of the r.m.s. roughness amplitude δ, of the lateral correlation length ξ, of the mean free path in the bulk l, and of the roughness exponent H. We found that the degree of surface irregularity, represented by the roughness exponent H characterizing the surface, does influence the conductivity of the film, as first discovered by Palasantzas and Barnas. However, this influence manifests itself for large bulk mean free paths l〜1000 nm and for large correlation lengths ξ〜5 nm, in which case the conductivity of the film for H = 1 exceeds by about 30% the conductivity for H = 0.2, an effect which is smaller than that reported by Palasantzas and Barnas. For correlation lengths ξ below 1 nm and mean free paths l〜100 nm, the influence of the roughness exponent H on the conductivity is reduced to below 10%, and for smaller mean free paths and correlation lengths the conductivity becomes insensitive to H. We also found that Mathiessen's rule is severily violated in the case of thin metallic films. The resistivity of the film coincides roughly with the surface-limited resistivity only in the case of ultrathin films t<5 nm. For thicker films 100 nm>t>5 nm, the resistivity of the film exceeds by some 20 to 30 % the value dictated by Mathiessen's rule. And conversely, the apparent surface-induced resistivity estimated assuming the validity of Mathiessen's rule, exceeds by nearly one order of magnitude the true surface-induced resistivity, except in the case of ultrathin films t<5 nm.lanl で見かけた気もしたが...
The reflectivity of short pitch metal gratings consisting of a series of narrow Gaussian ridges in the classical mount has been modeled as a function of frequency and in-plane wave vector (the plane of incidence containing the grating vector) for various ridge heights. Surface plasmon polaritons (SPP's) are found to be excited even in the zero-order region of the spectrum. These may result in strong absorption of radiation polarized with its electric field in the plane of incidence (transverse magnetic). For zero in-plane wave vector the SPP modes consist of a symmetric charge distribution on either side of the grating ridges, a family of these modes existing with different numbers of field maxima per grating period. Because of the charge symmetry these modes may only be coupled to at angles away from normal incidence where strong resonant absorption may then occur. The dispersion of these SPP modes as a function of the in-plane wave vector is found to be complex arising from the formation of very large band gaps due to the harmonic content of the grating profile, the creation of a pseudo high-energy mode, and through strong interactions between different SPP bands.これは理論。 例えば angle incident なイオンスパッタで作った ripple 構造を見れたりするのかなあ。
CやFORTRANで得た計算結果をグラフ化するのに gnuplot は非常に便利です．このgnuplotは普通，端末からコマンドで操作しますが，プログラムからの操作も可能です．しかし，プログラムからの操作はそれなりの知識を必要とするので，初心者には多少難しいかもしれません．
そこで Cでgnuplotを簡単に制御できるようにするためのパッケージもどき， GPTCALLを作ってみました．このパッケージもどきを使えば初心者でも簡単に gnuplotをCから操作できます．べんりそげ。
option "exposure" e "MOS exposure time" short default="1000" no option "gain" g "amplifier gain (l|m|h)" string default="l" no option "pixel" p "A/D pixcel clock (us)" short default="3" no option "output" o "output file" string noとかいうファイル (pma.ggo) を作る。 フォーマットは
option <longname> <shortchar> <description> <type> {default="VALUE"} <required?>
というかたち。詳細は /usr/share/doc/gengetopt/gengetopt.html。
% gengetopt < pma.ggoとすると cmdline.h と cmdline.c ができる。 自前のプログラムは
#include <stdio.h>
#include "cmdline.h"
#include "pma.h"
int main(int argc, char **argv){
struct gengetopt_args_info args_info;
WORD exposure, pixel;
BYTE gain;
if (cmdline_parser (argc, argv, &args_info) != 0) exit(1);
exposure = args_info.exposure_arg;
printf("exposure:\t%d\n", exposure);
pixel = args_info.pixel_arg;
printf("pixel:\t%d\n", pixel);
switch (args_info.gain_arg[0]) {
case 'l':
gain = AMP_GAIN_LOW;
break;
case 'm':
gain = AMP_GAIN_MIDDLE;
break;
case 'h':
gain = AMP_GAIN_HIGH;
break;
default:
fprintf(stderr, "gain should be one of l, m or h\n");
exit(1);
}
printf("gain:\t%d\n", gain);
if (args_info.output_given)
printf("file will be output to %s\n", args_info.output_arg);
return 0;
}
という感じで書いて、
gcc -o pma cmdline.c pma.cとすると出来上がり。
% ./pma exposure: 1000 pixel: 3 gain: 3 % ./pma -e2000 -p5 -gl --output=FILE exposure: 2000 pixel: 5 gain: 3 file will be output to FILEという感じの実行結果になる。 Makefile のエントリは
pma: pma.c cmdline.c gcc -Wall -o $@ $^ cmdline.c: pma.ggo gengetopt < $<という感じで。
通電加熱方式によるシリコン単結晶清浄表面作成技術を紹介します。読者としては、やる気と時間は十分あるけれども、経験と研究費は乏しい若手研究者を対象としています。また、ここに述べるシリコン清浄表面とは超高真空（〜１０-10Torr）中で作成する不純物濃度１％以下程度の表面です。微量の不純物は影響しない研究なら十分通用します。すばらしい。
Changes: Fixes for bugs that showed up in GCC 3.2.