なかのにっき

Norton Ghost 2003 で 2 台の PC の disk mirror をするには TCP ピアツーピアを使う。 コピー先マシンはフロッピーで起動して slave にし、 コピー元マシンを master にして、メニューから disk to disk を選べば OK。

なるほど こっち でしたか。 多分守備範囲としては JF よりは JM の方でしょうけど、 いずれもまだ手をつけている人はいないと思います。

I have developed a theory of adhesion between an elastic solid and a hard randomly rough substrate. The theory takes into account the fact that partial contact may occur between the solids on all length scales. I present numerical results for the case where the substrate surface is self-affine fractal. When the fractal dimension is close to 2, complete contact typically occurs in the macroasperity contact areas. For a fractal dimension larger than 2.5, the area of (apparent) contact decreases continuously when the magnification is increased.

We present a method for the extraction of the height?height correlation function of random surfaces from the average intensity of image speckles. The setup of a Fourier transforming and imaging system with a variable aperture is used for both the theoretical analysis and experimental performances. Based on the analytical expression of the image intensity, an algorithm is developed to formulate numerically the intensity data versus the aperture radius into the pair of Bessel?Fourier transform and the inversion, from which the height?height correlation function is reconstructed. Three samples of Gaussian correlation are used for the experimental demonstration. The extracted height?height correlation function and the random surface parameters obtained thereby conform with those obtained by atomic force microscopy.

To investigate the impact of damp heat treatments on the electronic and chemical structure of Cu(In,Ga)(S,Se)2-based thin film solar cells, we have performed a detailed soft x-ray emission study of the ZnO/CuIn(S,Se)2 and ZnO/CdS/CuIn(S,Se)2 interfaces. By comparing the sulfur L2,3 emission spectra of pristine and damp-heat treated samples, we find a sulfate formation at the ZnO/CuIn(S,Se)2 and the ZnO/CdS interface. The intensity behavior as a function of ZnO film thickness further reveals a diffusion of sulfur atoms into the ZnO film, leading to the formation of zinc sulfate in the ZnO window layer of damp-heat-treated Cu(In,Ga)(S,Se)2-based solar cells.

user_pref("accessibility.typeaheadfind", false);

を ~/.galeon/mozilla/galeon/prefs.js に追加すれば OK。 ありがとうございます。

We have measured the cathodoluminescence (CL) spectra of silicon dioxide (SiO2) films prepared by a variety of methods and observed peaks at 280, 445, 480, 520, and 640 nm. A comparison of the CL and electron spin resonance spectra of Si-doped quartz glass showed that the 445 and 480 nm peaks originated from oxygen vacancy centers, which were different from E centers. From CL measurement of a cross section of thermally grown SiO2 film deposited on a Si substrate, we found that the relative intensities of the 445 and 480 nm peaks were stronger than that of the CL peak at 640 nm. This CL peak was attributed to the nonbridging oxidation hole centers or their precursors. Furthermore, CL measurement of a cross section of a 16 M dynamic random-access memory device revealed that the relative intensity in the gate oxide film was stronger than that in the interlayer oxide film. These data suggest that the content of oxygen vacancy centers increases in the vicinity of the interface between the SiO2 film and the Si substrate relative to that of the nonbridging oxidation hole centers. CL spectroscopy provides us with a large amount of data on defects in the SiO2 film of Si-based electronic devices at the 0.1 μm level.

In this article, we investigate the influence of self-affine and mound roughness on the charge capacitance of double layers. The influence of self-affine roughness is more significant for small roughness exponents (H<0.5) and/or large roughness ratios w/ξ, as well as small charge and counter charge separations in electrolyte plasma as described by the Debye length λD(<ξ). On the other hand, mound roughness has a more complex influence on the charge capacitance, when the system correlation length ζ is larger than the average mound separation . In this case, the charge capacitance oscillates as a function of the parameters λ and ζ before it approaches the Gouy-Chapman [G. Gouy, J. Phys. (Paris) 9, 457 (1910); D. L. Chapman, Philos. Mag. 25, 475 (1913)] asymptotic limit for smooth interfaces. Furthermore, the oscillation magnitude is larger for relatively small Debye lengths λD(<ζ,λ).

sourceforge の Octave Repository にある。debian だと octave-forge を入れれば使える。

measured date    :  5: 9 PM 11/21/ 2
data title       : %T   T ALL RANGE  
operating mode   :     spectrum scan
system responce  :            medium
bandpass(nm)     :           2.0(nm)
UV-VIS change WL :         340.0(nm)
baseline         :            system
Lamp chg control :              auto
Higher bound WL  :         900.0(nm)
Lower  bound WL  :         185.0(nm)
scan speed       :         120.0(nm/s)

wavelength(nm), Intensity ratio
       900.000,       0.8973543
       899.600,       0.9003937
        :
       185.200,       0.0121768
[EOF]

というようなデータファイル (DOS 形式) を

#!/usr/bin/perl

while(<>){/^wavelength/ && last; }

while(<>){
	chomp;
	s/\r//;
	(my $wltmp, $trtmp) = split /,/;
	unshift @wl, $wltmp;
	unshift @tr, $trtmp;
}

printf "%d\n", scalar(@wl);

while(@wl){
	printf "%20f%20f\n", pop(@wl), pop(@tr);
}

という perl script (chop.pl) を通し、さらに

#!/usr/bin/octave -qf

LOADPATH=":/usr/share/octave//";

n = scanf("%d", "C");
for i = 1:n
	[wl(i) tr(i)] = scanf("%f%f", "C");
endfor

sr = sgolayfilt(tr, 5, 7);

nout = 0;
for i = 1:n
	# [400nm, 800nm], 2nm step
	if (ceil( wl(i) / 2) * 2 == wl(i) && wl(i) <= 800 && wl(i) >= 400)
		nout += 1;
	endif
endfor
printf("%5d\n", nout);

for i = 1:n
	if (ceil( wl(i) / 2) * 2 == wl(i) && wl(i) <= 800 && wl(i) >= 400)
		printf("%20f%20f\n", wl(i), sr(i));
	endif
endfor

という octave script (prefit.m) を通して出来上がり。 出力行カウントに 2 回ループをまわしてるのがマヌケだが、まあいいや。 こいつを fortran プログラムに食わせれば良いだろう。

なお octave-forge のスクリプトを使うときは LOADPATH 指定が必要。

• 最初の : (DEFAULT_LOADPATH に置き換わる)
• 最後の // (kpathsea 的に下層も再帰的に探す)

の 2 点がミソ ( このへん 参照)。

水に弱いのは 大リーグボール 2 号 でしたね。

c = 0.54 - 0.46 * cos (2 * pi * (0:m)' / m);

このとき のスクリプトで、FFT した係数ベクトルに

Hm = shift([0,hamming(255)'],128)';

を .* してから計算した 結果 (png 3k) 。さすがに高周波成分はだいぶ落ちている。